27C512L-15T vs 27C512-25 Vergleich

Detaillierter Direktvergleich von 27C512L-15T von WaferScale Integration und 27C512-25 von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

WaferScale Integration
27C512L-15T 27C512L-15T - 512Kbit 64Kx8 CMOS EPROM 150ns | WSI

27C512L-15T - 512Kbit 64Kx8 CMOS EPROM 150ns | WSI

27C512L-15T Obsolete
Microchip Technology
27C512-25 27C512-25 - 512Kbit 64Kx8 CMOS EPROM 250ns | Microchip

27C512-25 - 512Kbit 64Kx8 CMOS EPROM 250ns | Microchip

27C512-25 Obsolete

Spezifikationsvergleich

Parameter 27C512L-15T 27C512-25
Marke WaferScale Integration Microchip Technology
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Obsolete Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $3,20
Speichertyp CMOS UV/OTP EPROM CMOS EPROM (UV / OTP)
Density 512 Kilobit (64K x 8) —
Speicherorganisation 64K x 8-bit —
Access Time 150 ns (-15 speed grade) —
Versorgungsspannung +5 V +/-10% —
Programming Voltage (VPP) +12.5 V —
Programming Algorithm 100% Flashrite programming —
Standby Current (CMOS) 20 uA typical 20 uA typical
Schnittstelle Parallel —
Pinout Standard JEDEC-approved 27C512 pinout JEDEC-approved 28-pin
Gehäuse 32-PLCC (T suffix) DIP-28
Montageart Surface Mount Through Hole
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Active Current [DATA_NEEDED: active read current] —
Ausgangstyp Tri-state, 8-bit data bus (O0-O7) 3-state, common I/O
Address Inputs A0-A15 (16 address lines) —
Control Signals CE, OE, VPP —
RoHS-Status unknown [DATA_NEEDED: RoHS status]
Memory Organization — 64K x 8 (524,288 bits)
Maximum Access Time — 250 ns
Supply Voltage (Read Mode) — 5 V +/- 10%
Operating Mode — Asynchronous
Programming Method — High-voltage EPROM programming (Flashrite type)
Erase Method — UV (windowed variant) or not erasable (OTP variant)
Access Time Guarantee — Any byte in less than 250 ns
Technology — CMOS floating gate

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern