2EDL6014ACG2DXTMA1 vs 2EDL8034G4CXTMA1 Vergleich
Detaillierter Direktvergleich von 2EDL6014ACG2DXTMA1 von Infineon und 2EDL8034G4CXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
2EDL6014ACG2DXTMA1 - 120V Half-Bridge Gate Driver, 4A/6A | Infineon
2EDL6014ACG2DXTMA1 ✓ AktivSpezifikationsvergleich
| Parameter | 2EDL6014ACG2DXTMA1 | 2EDL8034G4CXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $1,55 |
| Driver Type | Half-Bridge Gate Driver | Half-Bridge (High-Side / Low-Side) |
| Number of Channels | 2 (high-side + low-side) | — |
| Ausgangskonfiguration | Non-Inverting | — |
| High-Side Voltage Rating | 120 V | — |
| Source Output Current | 4 A | — |
| Sink Output Current | 6 A | — |
| Supply Voltage (VDD) | 2.97 V to 5.5 V | — |
| Rise Time (typ.) | 4.2 ns | — |
| Fall Time (typ.) | 3.8 ns | — |
| Betriebstemperatur | -40 C to +125 C | — |
| Gehäuse | 11-WQFN (2.2 x 2.2 mm) with exposed pad | PG-VDSON-10-2 (DSN-10) with exposed pad |
| Packing Method | Tape & Reel | — |
| Isolation Type | Isolated (level-shifted floating high-side) | Junction-isolated (level-shifted) |
| Montageart | Surface Mount | Surface Mount |
| Technology Family | EiceDRIVER 2EDL | — |
| Configuration | — | Non-Inverting |
| Bootstrap Voltage (Max) | — | 120 V |
| Peak Source Current | — | 3 A |
| Peak Sink Current | — | 4 A |
| Anzahl der Ausgänge | — | 2 |
| Rise Time (Typical) | — | [DATA_NEEDED: rise time ns] |
| Fall Time (Typical) | — | [DATA_NEEDED: fall time ns] |
| Propagation Delay (Typical) | — | [DATA_NEEDED: propagation delay ns] |
| Input Logic Compatibility | — | 3.3 V / 5 V |
| VCC Supply Voltage | — | [DATA_NEEDED: VCC range V] |
| UVLO Protection | — | Yes (VCC and VBS) |
| ESD Rating (HBM) | — | [DATA_NEEDED: ESD HBM kV] |
| Betriebs-Sperrschichttemperatur | — | -40 C to +125 C |
| Lead-Free / RoHS | — | Yes (per Infineon product page) |
| MSL-Level | — | [DATA_NEEDED: MSL level] |