2EDL8124GXUMA1 vs 1ED3142MC12HXUMA1 Vergleich

Detaillierter Direktvergleich von 2EDL8124GXUMA1 von Infineon und 1ED3142MC12HXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2EDL8124GXUMA1 1ED3142MC12HXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,98 $1,32
Driver Configuration Half-bridge (high-side + low-side) —
Input Type Non-inverting, TTL-compatible with hysteresis —
Number of Drivers 2 —
Peak Source Current 3 A —
Peak Sink Current 4 A —
Bootstrap Supply (VBS) Maximum 120 V —
VCC Supply Range [DATA_NEEDED: VCC min/max typical range] —
Isolation Type Junction isolation (JI) —
Bootstrap Diode Integrated —
Propagation Delay (typical) < 50 ns —
Delay Matching Between Channels [DATA_NEEDED: delay matching spec in ns] —
UVLO Present on VCC and VBS —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range in C] —
Gehäuse PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad PG-DSO-8 (PG-LDSO-8-1)
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL rating] —
RoHS-Status Compliant —
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Number — 1ED3142MC12HXUMA1
Product Family — EiceDRIVER X3 Compact
Driver Type — Isolated single-channel gate driver
Isolation Technology — Coreless transformer (galvanic)
Isolation Voltage — 3000 Vrms
Number of Channels — 1
Anzahl der Ausgänge — 2 (separate source/sink)
Configuration — Inverting, Non-Inverting
Source Drive Current — 6 A
Sink Drive Current — 6.5 A
Maximum Rise Time — 20 ns
Maximum Fall Time — 20 ns
Propagation Delay (typ.) — 40 ns
Supported Switches — IGBT, MOSFET, SiC MOSFET
EU RoHS — Compliant
Part Status — Active
ECCN — EAR99

Datenblätter & Ressourcen

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