A3PE3000-1FGG896 vs A3PE3000L-1FGG896 Vergleich

Detaillierter Direktvergleich von A3PE3000-1FGG896 von Microchip Technology und A3PE3000L-1FGG896 von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
A3PE3000-1FGG896 A3PE3000-1FGG896 - ProASIC3E Flash FPGA 3M Gates 620 I/O | Microchip

A3PE3000-1FGG896 - ProASIC3E Flash FPGA 3M Gates 620 I/O | Microchip

A3PE3000-1FGG896 ✓ Aktiv
Microchip Technology
A3PE3000L-1FGG896 A3PE3000L-1FGG896 - 3M-Gate ProASIC3L Flash FPGA | Microchip

A3PE3000L-1FGG896 - 3M-Gate ProASIC3L Flash FPGA | Microchip

A3PE3000L-1FGG896 ✓ Aktiv

Spezifikationsvergleich

Parameter A3PE3000-1FGG896 A3PE3000L-1FGG896
Marke Microchip Technology Microchip Technology
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $255,00
Family ProASIC3E (Flash FPGA) ProASIC3L
System Gates 3,000,000 3000000
Logic Cells 75,264 75264
User I/O 620 620
Speed Grade -1 -1
Gehäuse 896-ball FBGA (FGG896) 896-ball FBGA (FGG896), 1.00 mm pitch
Technology Nonvolatile flash, CMOS —
Configuration Single-chip, Instant On (on-chip flash) —
Reprogrammability Yes (in-system reprogrammable flash fabric) —
Montageart Surface Mount Surface Mount
Core Voltage [DATA_NEEDED: core voltage] 1.2 V (supports 1.2 V to 1.5 V)
Betriebstemperatur [DATA_NEEDED: operating temperature range] —
Embedded Memory [DATA_NEEDED: embedded block RAM capacity] —
Lead Free Yes (LEAD FREE per distributor listing) —
RoHS-Status Compliant —
MSL-Level [DATA_NEEDED: moisture sensitivity level] —
Country of Origin South Korea (per MicrochipDirect for A3PE3000-1FG896 family variant) —
Total Bits of RAM — [DATA_NEEDED: Total embedded RAM bits]
I/O Voltage — As low as 1.2 V
Process Technology — 130 nm flash
Configuration Memory — Nonvolatile flash (single-chip)
Special Features — Flash*Freeze technology
Packaging — Tray
Terminal Pitch — 1.00 mm
Technology Base — CMOS flash
Dynamic Power Reduction vs ProASIC3 — Approx. 40%
Static Power Reduction vs ProASIC3 — Approx. 50%

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