AT24C02D-SSHM-T vs AT24C02D-MAHM-T Vergleich

Detaillierter Direktvergleich von AT24C02D-SSHM-T von Microchip Technology und AT24C02D-MAHM-T von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
AT24C02D-SSHM-T AT24C02D-SSHM-T - 2Kb I2C EEPROM, 1MHz, 1.7V-5.5V, 8-SOIC | Microchip

AT24C02D-SSHM-T - 2Kb I2C EEPROM, 1MHz, 1.7V-5.5V, 8-SOIC | Microchip

AT24C02D-SSHM-T ✓ Aktiv
Microchip Technology
AT24C02D-MAHM-T AT24C02D-MAHM-T - 2Kb I2C EEPROM 1MHz 8-UDFN | Microchip

AT24C02D-MAHM-T - 2Kb I2C EEPROM 1MHz 8-UDFN | Microchip

AT24C02D-MAHM-T ✓ Aktiv

Spezifikationsvergleich

Parameter AT24C02D-SSHM-T AT24C02D-MAHM-T
Marke Microchip Technology Microchip Technology
Kategorie EEPROM EEPROM
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,17 $0,21
Speichertyp Non-volatile EEPROM (Serial) EEPROM - Serial
Speichergröße 2 Kbit 2 Kbit (256 x 8)
Memory Organization 256 x 8 bits 256 x 8
Schnittstelle I2C (2-Wire Serial) I2C (2-wire serial)
Maximale Taktfrequenz 1 MHz (Fast-mode Plus) 1 MHz
Access Time 450 ns 4.5 us (max)
Supply Voltage (VCC) 1.7 V to 5.5 V —
Betriebstemperaturbereich -40 C to +85 C -40 C to +85 C (Industrial)
Gehäuse / Bauform 8-SOIC (0.154" / 3.90 mm) —
Montageart Surface Mount Surface Mount
Write Cycle Time (max) 5 ms (typical) —
Endurance (Write/Erase Cycles) 1,000,000 cycles —
Data Retention >200 years 100 years (typical)
Device Address Pins A0, A1, A2 (hardware-selectable, up to 8 devices per bus) —
Write Protect Pin Yes (WP, active-high) —
Input Type (SCL/SDA) Schmitt-trigger —
RoHS-Status Compliant (Pb/HALO-free, NiPdAu lead finish) Compliant (NiPdAu lead finish, halogen-free)
MSL-Level 1 (unlimited floor life at <30 C / 85% RH) 1 (Unlimited)
Supply Voltage Range — 1.7 V to 3.6 V
Operating Current (Read) — 1 mA (max at 400 kHz)
Standby Current — 1 uA (typical)
Write Cycle Time (Byte/Page) — 5 ms (max)
Page Write Buffer Size — 16 bytes
Write Endurance — 1,000,000 cycles per byte (typical)
Gehäuse — 8-UDFN Exposed Pad (2 mm x 3 mm)
Write Protection Pin — Yes (WP, active-high)
Address Pins — A0, A1, A2 (allow 8 devices on bus)

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