ATSAMG55J19A-AU vs ATSAMG55J19B-AUT Vergleich

Detaillierter Direktvergleich von ATSAMG55J19A-AU von Microchip Technology und ATSAMG55J19B-AUT von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
ATSAMG55J19A-AU ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip

ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip

ATSAMG55J19A-AU ✓ Aktiv
Microchip Technology
ATSAMG55J19B-AUT ATSAMG55J19B-AUT - ARM Cortex-M4 MCU 120MHz 512KB LQFP-64

ATSAMG55J19B-AUT - ARM Cortex-M4 MCU 120MHz 512KB LQFP-64

ATSAMG55J19B-AUT ✓ Aktiv

Spezifikationsvergleich

Parameter ATSAMG55J19A-AU ATSAMG55J19B-AUT
Marke Microchip Technology Microchip Technology
Kategorie Microcontrollers Microcontrollers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,99 $5,42
Core Architecture ARM Cortex-M4 with FPU ARM Cortex-M4 with single-precision FPU
Core Clock Speed (max) 120 MHz —
Instruction Set 32-bit RISC + DSP extensions + FPU (single-precision) —
Program Flash Memory 512 KB (512K x 8) —
SRAM (Total) 160 KB —
Backup SRAM with Retention 16 KB (retained in deep sleep) —
Supply Voltage (VDDIO/VDDCORE) 1.62 V to 3.6 V —
Betriebstemperatur -40 C to +85 C (industrial) —
Gehäuse 64-LQFP (10x10 mm) 64-pin LQFP (10x10 mm)
Audio Interface I2S with PDM/TDM and sample-rate converter I2S (digital audio)
USB USB 2.0 Full-Speed device/host —
ADC 12-bit SAR 12-bit, 16-channel (per datasheet)
Communication Peripherals USART/UART, SPI, TWI (I2C), I2S, HS USB USART, SPI, TWI/I2C
External Bus Interface (EBI) Yes (for SRAM/SDRAM/NOR Flash expansion) —
Active Power Consumption Down to 100 uA/MHz —
Deep Sleep Current Below 7 uA with SRAM retention —
Wake-up Time (deep sleep to first instruction) Down to 3 us —
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant
Lifecycle / New Design Recommendation Active (new designs: consider ATSAMG55J19B Revision B) —
Maximale Taktfrequenz — 120 MHz
Program Memory (Flash) — 512 KB (512K x 8)
SRAM — 176 KB
Operating Voltage Range — 1.62 V to 3.6 V
Betriebstemperaturbereich — -40C to +85C (Industrial)
Datenbusbreite — 32-bit
Number of I/O Pins — Up to 47 (per datasheet)
USB Interface — USB 2.0 Full-Speed Device/Host with on-chip PHY
Timers/PWM — 16-bit timers, PWM channels (per datasheet)
DMA — Peripheral DMA controller
Delivery Form — Tape & Reel (AUT suffix)
Series — SAM G55
Silicon Revision — B

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