BSC009NE2LS5IATMA1 vs ISZ019N03L5SATMA1 Vergleich
Detaillierter Direktvergleich von BSC009NE2LS5IATMA1 von Infineon und ISZ019N03L5SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC009NE2LS5IATMA1 - 25V 0.95mΩ 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 ✓ AktivInfineon
ISZ019N03L5SATMA1 - 30V 1.9mΩ OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC009NE2LS5IATMA1 | ISZ019N03L5SATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,02 | $0,48 |
| Manufacturer Part Number | BSC009NE2LS5IATMA1 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS™ 5 (25V/30V family) | — |
| Transistortyp | N-Channel MOSFET | — |
| Configuration | Single with built-in diode | — |
| Drain-Source Voltage (V_DS) max | 25 V | — |
| Gate-Source Voltage (V_GS) max | 20 V | — |
| Gate-Threshold Voltage V_GS(th) typ | 1.7 V (range 1.0-2.0 V) | — |
| R_DS(on) max @ V_GS=10V | 0.95 mΩ | — |
| Continuous Drain Current (I_D) @ T_A=25°C | 40 A | — |
| Continuous Drain Current (I_D) @ T_C=25°C | 217 A (pulsed, datasheet rating) | — |
| Power Dissipation (P_D) @ T_A | 2.5 W | — |
| Power Dissipation (P_D) @ T_C | 74 W | — |
| Total Gate Charge (Q_G) typ | 23 nC @ V_GS=0-4.5V | — |
| Input Capacitance (C_iss) typ | 3200 pF | — |
| Betriebstemperaturbereich | -55°C to +150°C | -55C to +175C (TJ max) |
| Gehäuse | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TSDSON-8-FL (5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Terminal Finish | Matte Tin (e3 per JESD-609) | — |
| Number of Terminals | 8 | — |
| RoHS-Status | Compliant | — |
| Product Family | — | OptiMOS 5 (<= 40V) |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 22 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| RDS(on) at VGS=10V | — | 1.9 mΩ (typical, ID=20A) |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typical) |
| Gate-Source Voltage Rating (VGS) | — | ±20 V |
| Total Gate Charge (Qg) | — | 44 nC at VGS=10V |
| Input Capacitance (Ciss) | — | 2800 pF at VDS=15V |
| RoHS / REACH | — | Compliant |
| Avalanche Rated | — | Yes |
| RG-tested | — | 100% |