BSC010N04LSATMA1 vs BSC014N04LSIATMA1 Vergleich
Detaillierter Direktvergleich von BSC010N04LSATMA1 von Infineon und BSC014N04LSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC010N04LSATMA1 | BSC014N04LSIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,52 | $0,39 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Breakdown Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) Max | +/- 20 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Ta=25C) | 38 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed IDM rating] |
| On-Resistance RDS(on) Max @ VGS=10V | 1.0 mOhm | — |
| On-Resistance RDS(on) Test Condition | VGS = 10 V, ID = 50 A | — |
| Gate Threshold Voltage VGS(th) Typ | 2 V | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (Tc=25C) | 139 W | — |
| Power Dissipation (Ta=25C) | 2.5 W | — |
| Betriebstemperaturbereich | -55C to +150C | -55 C to +150 C |
| Gehäuse | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | — |
| Technology | OptiMOS 5 | OptiMOS 5 (trench, thin-wafer) |
| Avalanche Rated | 100% avalanche tested | — |
| Manufacturer | Infineon Technologies | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, Ta) | — | 31 A |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| RoHS-Status | — | Compliant |
| Tradename | — | OptiMOS |