BSC011N03LSIATMA1 vs BSC039N06NSATMA1 Vergleich
Detaillierter Direktvergleich von BSC011N03LSIATMA1 von Infineon und BSC039N06NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΩ Power MOSFET | Infineon
BSC011N03LSIATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BSC011N03LSIATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,32 | $0,46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 30 V | — |
| Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 37 A | — |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | [DATA_NEEDED: IDM pulsed value at TC] |
| On-State Resistance RDS(on) at VGS=10V | 1.1 mΩ (typical) | — |
| Power Dissipation at TA=25°C | 2.5 W | — |
| Power Dissipation at TC=25°C | 96 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +150 °C | -55C to +150C |
| Gehäuse | PG-TDSON-8-7 (Surface Mount) | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Series | — | OptiMOS 5 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA | — | 19 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | — | 2.5 W |
| Power Dissipation at TC (PD) | — | 69 W |
| Anzahl der Pins | — | 8 |
| Gate Drive Voltage (VGS) | — | ±20 V max |
| Technology | — | OptiMOS 5 (TrenchFET-style) |