BSC014N04LSTATMA1 vs BSZ017NE2LS5IATMA1 Vergleich
Detaillierter Direktvergleich von BSC014N04LSTATMA1 von Infineon und BSZ017NE2LS5IATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC014N04LSTATMA1 | BSZ017NE2LS5IATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,41 | $0,64 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC014N04LSTATMA1 | — |
| Technology | OptiMOS 5 (N-Channel Trench) | — |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) @ TA=25°C | 33 A | — |
| Continuous Drain Current (ID) @ TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R DS(on) max @ VGS=10V | 1.45 mΩ | — |
| R DS(on) typical @ VGS=10V | [DATA_NEEDED: RDS(on) typical] | — |
| Power Dissipation (TA) | 3 W | 2.1 W |
| Power Dissipation (TC) | 115 W | 50 W |
| Betriebstemperaturbereich | -55°C to +150°C | — |
| Gehäuse | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TSDSON-8-FL (8-PowerTDFN) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | MSL1 | — |
| Lead-Free | Yes | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (TA) | — | 27 A |
| Continuous Drain Current (TC) | — | 40 A |
| On-Resistance RDS(on) @ VGS=10V | — | 1.7 mΩ |
| On-Resistance Test Current | — | 20 A |
| Gate-Source Voltage (VGS) Rating | — | ±16 V |
| Gate Threshold Voltage VGS(th) | — | 2 V @ 250 µA |
| Total Gate Charge Qg | — | 30 nC @ VGS=10V |
| Input Capacitance Ciss | — | 2000 pF @ VDS=12V |
| Betriebs-Sperrschichttemperatur | — | -55°C to +150°C |
| Series / Family | — | OptiMOS 5 25V |