BSC014N06NSATMA1 vs BSC0504NSIATMA1 Vergleich

Detaillierter Direktvergleich von BSC014N06NSATMA1 von Infineon und BSC0504NSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSC014N06NSATMA1 BSC0504NSIATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,89 $0,00
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Transistortyp N-Channel MOSFET N-channel MOSFET
Drain-Source Voltage (VDS) 60 V —
Gate-Source Voltage (VGS) Max +/- 20 V —
Continuous Drain Current (ID) at Ta 30 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) Typ @ VGS=10V 1.4 mOhm —
On-Resistance RDS(on) Max @ VGS=10V 1.45 mOhm —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 156 W —
Betriebstemperaturbereich -55C to +150C [DATA_NEEDED: operating temperature range]
Gehäuse PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-TDSON-8-6
Montageart Surface Mount Surface Mount
MSL-Level 1 —
RoHS-Status Compliant unknown
Technology OptiMOS 5 (shielded-gate trench) —
Drain-to-Source Voltage — 30 V
Continuous Drain Current at Ta — 21 A
Continuous Drain Current at Tc — 72 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
Technology Family — OptiMOS 5
Anzahl der Pins — 8 pins
Exposed Pad — Yes, according to distributor package description
On-State Resistance — [DATA_NEEDED: on-state resistance]
Gate Charge — [DATA_NEEDED: gate charge]
Gate-Schwellenspannung — [DATA_NEEDED: gate threshold voltage]
Wärmewiderstand — [DATA_NEEDED: thermal resistance]
AEC-Q100 Qualification — [DATA_NEEDED: AEC-Q100 qualification]
Lead-Free Status — unknown
Halogen-Free Status — unknown
REACH Status — unknown

Datenblätter & Ressourcen

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