BSC014NE2LSIATMA1 vs BSC016N06NSTATMA1 Vergleich
Detaillierter Direktvergleich von BSC014NE2LSIATMA1 von Infineon und BSC016N06NSTATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC014NE2LSIATMA1 | BSC016N06NSTATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,92 |
| Technology | N-Channel MOSFET (OptiMOS 25V) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 25 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID, Ta) | 33 A | — |
| Continuous Drain Current (ID, Tc) | [DATA_NEEDED: Tc condition rating] | — |
| Pulsed Drain Current (IDM, Tc) | 100 A | — |
| On-State Resistance RDS(on) | 1.4 mOhm (typ) at VGS = 10 V | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ at VGS=10V] | — |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Power Dissipation (Tc) | 74 W | 167 W |
| Betriebs-Sperrschichttemperatur | -55 °C to +150 °C | — |
| Gehäuse | PG-TDSON-8-7 (SuperSO8) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC016N06NSTATMA1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Continuous Drain Current (ID, Ta=25C) | — | 31 A |
| On-Resistance RDS(on) max (VGS=10V) | — | 1.6 mOhm |
| Betriebstemperaturbereich | — | -55 C to +150 C |
| Series | — | OptiMOS |