BSC015NE2LS5IATMA1 vs BSC010NE2LSIATMA1 Vergleich

Detaillierter Direktvergleich von BSC015NE2LS5IATMA1 von Infineon und BSC010NE2LSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSC015NE2LS5IATMA1 BSC010NE2LSIATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,69 $0,92
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 25V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 25 V —
Continuous Drain Current (ID) at Ta 33 A —
Continuous Drain Current (ID) at Tc 100 A —
On-Resistance RDS(on) Max at VGS=10V 1.5 mOhm —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 50 W —
Gehäuse PG-TDSON-8-6 (SuperSO8 5x6) PG-TDSON-8-7 (TDSON-8 EP)
Montageart Surface Mount Surface Mount
Pin-Anzahl 8 8
Technology OptiMOS 5 trench OptiMOS (Trench)
Betriebstemperaturbereich -55C to +150C (junction) -55C to +150C (TJ)
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge Qg Typ [DATA_NEEDED: Qg typical value] —
RoHS-Status Compliant Compliant
MSL-Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Series / Family — OptiMOS 25V
Transistortyp — N-Channel MOSFET
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) at TA — 38 A
Continuous Drain Current (ID) at TC — 100 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 96 W
Configuration — Single N-Channel
Gate Drive — Logic-level compatible
Rds(on) at 10V — [DATA_NEEDED: Rds(on) at VGS=10V]
Rds(on) at 4.5V — [DATA_NEEDED: Rds(on) at VGS=4.5V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]

Datenblätter & Ressourcen

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