BSC016N06NSATMA1 vs BSZ110N08NS5ATMA1 Vergleich
Detaillierter Direktvergleich von BSC016N06NSATMA1 von Infineon und BSZ110N08NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC016N06NSATMA1 | BSZ110N08NS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $0,44 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS™ 5 60V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, TA) | 30 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.6 mΩ | — |
| Total Gate Charge (Qg) | 71 nC | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 139 W | — |
| Betriebstemperaturbereich | -55 °C to +150 °C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited) | [DATA_NEEDED: MSL level] |
| RoHS-Status | Compliant | Compliant |
| Gate Drive (recommended) | 10 V | — |
| Technology | OptiMOS™ 5 | OptiMOS 5 N-Channel Power MOSFET |
| Part Family | — | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Tc | — | 40 A |
| On-Resistance RDS(on) max | — | 11 mΩ |
| Power Dissipation (PD) at Tc | — | 50 W |
| Polarity | — | N-Channel |
| Configuration | — | Single MOSFET |
| Gate Drive Voltage (VGS) | — | [DATA_NEEDED: VGS rating] |