BSC027N06LS5ATMA1 vs BSC146N10LS5ATMA1 Vergleich
Detaillierter Direktvergleich von BSC027N06LS5ATMA1 von Infineon und BSC146N10LS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC027N06LS5ATMA1 | BSC146N10LS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,66 | $0,74 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 5 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 (logic-level) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level | Logic-level (typ. ~1.7 V) |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Continuous Drain Current (ID) at Tc=100°C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| On-Resistance (RDS(on)) max @ VGS=10V | 2.7 mOhm | — |
| On-Resistance (RDS(on)) @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Power Dissipation (PD) at Tc=25°C | 83 W | — |
| Betriebstemperaturbereich | -55°C to +150°C | -55 C to +150 C (TJ max) |
| Gehäuse / Bauform | PG-TDSON-8-7 (SuperSO8 5x6) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| Gate Charge (Qg) | [DATA_NEEDED: total Qg] | — |
| Avalanche Energy Rated | Yes | — |
| RoHS-Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at Tc=25 C | — | 44 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 14.6 mOhm |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 52 W |
| Gehäuse | — | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS] |