BSC027N06LS5ATMA1 vs IPD60R380C6ATMA1 Vergleich
Detaillierter Direktvergleich von BSC027N06LS5ATMA1 von Infineon und IPD60R380C6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC027N06LS5ATMA1 | IPD60R380C6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,66 | $0,41 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 5 | — |
| Part Status | Active | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | CoolMOS C6 Superjunction |
| Drain-Source Voltage (VDS) | 60 V | 600 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level | [DATA_NEEDED: gate threshold voltage] |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Continuous Drain Current (ID) at Tc=100°C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| On-Resistance (RDS(on)) max @ VGS=10V | 2.7 mOhm | — |
| On-Resistance (RDS(on)) @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Power Dissipation (PD) at Tc=25°C | 83 W | — |
| Betriebstemperaturbereich | -55°C to +150°C | — |
| Gehäuse / Bauform | PG-TDSON-8-7 (SuperSO8 5x6) | — |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| Gate Charge (Qg) | [DATA_NEEDED: total Qg] | — |
| Avalanche Energy Rated | Yes | — |
| RoHS-Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Continuous Drain Current (ID) at TC=25C | — | 10.6 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | — | 380 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | — | 83 W |
| Operating Junction Temperature (TJ) | — | -55C to +150C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Gehäuse | — | PG-TO252-3 (DPAK) |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| Drain-Tab Connection | — | Exposed pad (electrically connected to drain) |