BSC027N10NS5ATMA1 vs BSC098N10NS5ATMA1 Vergleich
Detaillierter Direktvergleich von BSC027N10NS5ATMA1 von Infineon und BSC098N10NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC027N10NS5ATMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | NRND | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,10 | $0,55 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC027N10NS5ATMA1 | — |
| Technology | OptiMOS 5 (100V) | OptiMOS 5 (N-channel trench MOSFET) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at Ta | 23 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | 194 A | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm | — |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 214 W | — |
| Gehäuse | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj min/max] | [DATA_NEEDED: Tj min/max] |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) | — |
| Continuous Drain Current (ID, Tc=25C) | — | 60 A |
| Continuous Drain Current (ID, Ta) | — | [DATA_NEEDED: ID Ta-rated value] |
| On-Resistance RDS(on) max @ VGS=10V | — | 9.8 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25C) | — | 69 W |
| Diode Continuous Forward Current (IS) | — | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | — | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | — | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | — | 1.1 V (IF=30 A, Tj=25C) |
| Shipping Packaging | — | Tape & Reel (T/R) |