BSC028N06NSTATMA1 vs BSZ0901NSIATMA1 Vergleich
Detaillierter Direktvergleich von BSC028N06NSTATMA1 von Infineon und BSZ0901NSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC028N06NSTATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,40 | $0,34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 25V |
| Part Number Base | BSC028N06NS | — |
| Technology | MOSFET N-Channel (OptiMOS 5) | OptiMOS trench N-channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V to 3.5 V | — |
| Total Gate Charge Qg | 37 nC @ VGS=10V | — |
| Input Capacitance Ciss | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] | — |
| Output Capacitance Coss | 825 pF | — |
| Reverse Transfer Capacitance Crss | 56 pF | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 100 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse | PG-TDSON-8-7 (SuperSO8, 5x6 mm) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Halogenfrei | Yes | — |
| MSL-Level | 1 | — |
| AEC-Q101 Automotive Qualified | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] | — |
| Part Number | — | BSZ0901NSIATMA1 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Pin-Anzahl | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Betriebstemperaturbereich | — | -55 C to +150 C (typical MOSFET range) |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |