BSC030N03LSGATMA1 vs BSC076N06NS3GATMA1 Vergleich
Detaillierter Direktvergleich von BSC030N03LSGATMA1 von Infineon und BSC076N06NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC030N03LSGATMA1 | BSC076N06NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 100 A | — |
| Continuous Drain Current (Id) @ Ta=25C | 23 A | — |
| RDS(on) Max @ VGS=10V | 3 mOhm | — |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (Vgs th) Typ | 2.2 V | — |
| Gate Charge (Qg) Typ @ VGS=15V | 55 nC | — |
| Output Charge (Qoss) | 66 pF | — |
| Input Capacitance (Ciss) Typ | 4.3 nF | — |
| Power Dissipation (Pd) @ Ta=25C | 2.5 W | — |
| Power Dissipation (Pd) @ Tc=25C | 69 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Gehäuse | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 | 1 (unlimited) |
| Avalanche Rated | Yes (100% tested) | — |
| Product Family | — | OptiMOS 3 |
| Technology | — | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25C | — | 50 A |
| On-Resistance RDS(on) max at VGS=10V | — | 7.6 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | — | 10.4 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 3.5 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 69 W |
| Betriebstemperaturbereich | — | -55C to +150C |
| RoHS Compliance | — | Compliant |
| Halogenfrei | — | Yes (per Infineon product page) |