BSC030N08NS5ATMA1 vs BSC072N08NS5ATMA1 Vergleich

Detaillierter Direktvergleich von BSC030N08NS5ATMA1 von Infineon und BSC072N08NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSC030N08NS5ATMA1 BSC072N08NS5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,55 $0,46
Manufacturer Infineon Technologies Infineon Technologies
Product Type N-Channel Power MOSFET —
Technology OptiMOS 5 OptiMOS 5
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (ID,pulse) 161 A —
Gate-Source Voltage (VGS) max +/-20 V —
RDS(on) max at VGS=10 V 3.0 mOhm —
RDS(on) max at VGS=7 V [DATA_NEEDED: RDS(on) at VGS=7V] —
Power Dissipation (Ta=25C, 1.5mm FR4) 2.5 W —
Power Dissipation (TC=25C) 139 W —
Operating Temperature Range (TJ) -55C to +150C —
Gehäuse PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Montageart Surface Mount Surface Mount
MSL-Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS-Status Compliant Compliant
Halogenfrei Yes —
Lead-Free Yes —
Gate Drive Logic Standard 10V, compatible with 12V drive —
Optimized Application Synchronous Rectification —
Part Family — BSC072N08NS5 (OptiMOS 5)
Transistortyp — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID) at Tc — 74 A
Drain-Source On-Resistance (RDS(on)) Max — 7.2 mOhm at VGS=10V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
Betriebstemperaturbereich — [DATA_NEEDED: full min/max operating Tj]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg]
Shipping Pack — Tape & Reel (ATMA1)
Standard Pack Quantity — 5000

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