BSC040N08NS5ATMA1 vs BSC0902NSATMA1 Vergleich
Detaillierter Direktvergleich von BSC040N08NS5ATMA1 von Infineon und BSC0902NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC040N08NS5ATMA1 | BSC0902NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,15 | $0,78 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC040N08NS5ATMA1 | — |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Maximum Drain Current (ID, Tc=25C, package-limited) | 121 A | — |
| On-Resistance (RDS(on) max, VGS=10V) | 4 mOhm | — |
| Power Dissipation (Ta=25C, 1in² PCB) | 2.5 W | — |
| Power Dissipation (Tc=25C) | 104 W | — |
| Gehäuse | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8) |
| Montageart | Surface Mount | Surface Mount |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 | — |
| Primary Application | Synchronous rectification in telecom and server power supplies | — |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Ta) | — | 24 A |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 48 W |
| RDS(on) @ VGS=10V max | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| RDS(on) @ VGS=4.5V max | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg typ) | — | [DATA_NEEDED: Qg typical] |
| Betriebstemperaturbereich | — | -55C to +150C (Tj) |
| Qualification | — | JEDEC qualified for target applications |
| RoHS Compliance | — | Compliant (Pb-free lead plating) |
| Halogenfrei | — | Yes, per IEC 61249-2-21 |
| Avalanche Rated | — | Yes (100% avalanche tested) |