BSC0501NSIATMA1 vs BSC155N06NDATMA1 Vergleich
Detaillierter Direktvergleich von BSC0501NSIATMA1 von Infineon und BSC155N06NDATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC0501NSIATMA1 | BSC155N06NDATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $0,62 |
| Manufacturer | Infineon | Infineon Technologies |
| Product Family | OptiMOS 5 25V/30V | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 50 W | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Gehäuse | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-4 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS-Status | Compliant | Compliant (Pb-free plating) |
| Avalanche Rated | Yes | — |
| Technology | Trench-gate OptiMOS 5 | OptiMOS 3 (N-channel trench) |
| Part Number | — | BSC155N06NDATMA1 |
| Configuration | — | Dual N-channel MOSFET array |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 20 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 15.5 mOhm |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Betriebstemperaturbereich | — | -55 C to +175 C |
| Power Dissipation (Tc=25C) | — | 50 W |
| Lead-Free Plating | — | Yes |
| Shoot-Through Immunity Qgd/Qgs | — | < 0.8 |