BSC0501NSIATMA1 vs BSZ031NE2LS5ATMA1 Vergleich

Detaillierter Direktvergleich von BSC0501NSIATMA1 von Infineon und BSZ031NE2LS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSC0501NSIATMA1 BSZ031NE2LS5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,65 $0,26
Manufacturer Infineon Infineon Technologies
Product Family OptiMOS 5 25V/30V —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta 29 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: IDM]
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 50 W —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Betriebs-Sperrschichttemperatur -55C to +150C -55 C to +150 C
Gehäuse PG-TDSON-8-6 (SuperSO8) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Montageart Surface Mount Surface Mount
MSL-Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL]
RoHS-Status Compliant Compliant
Avalanche Rated Yes —
Technology Trench-gate OptiMOS 5 —
Part Number — BSZ031NE2LS5ATMA1
Technology / Platform — OptiMOS 5 25V/30V N-channel trench MOSFET
Drain-Source Voltage (VDS) max — 25 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Continuous Drain Current (ID) at Ta=25C — 19 A
Continuous Drain Current (ID) at Tc=25C — 40 A
RDS(on) max @ VGS=10 V — 3.1 mOhm
RDS(on) typical @ VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Power Dissipation at Ta=25C — 2.1 W
Power Dissipation at Tc=25C — 30 W
Lead-Free — Yes
Halogenfrei — Yes

Datenblätter & Ressourcen

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