BSC060N10NS3GATMA1 vs BSZ900N20NS3GATMA1 Vergleich
Detaillierter Direktvergleich von BSC060N10NS3GATMA1 von Infineon und BSZ900N20NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC060N10NS3GATMA1 | BSZ900N20NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 200 V |
| Continuous Drain Current (ID, Ta) | 14.9 A | — |
| Continuous Drain Current (ID, Tc) | 90 A | — |
| On-Resistance RDS(on) Max @ VGS=10V | 6 mOhm | — |
| Power Dissipation (PD, Tc=25C) | 125 W | 62.5 W |
| Gate Threshold Voltage VGS(th) | 2.0 V to 3.5 V | — |
| Betriebs-Sperrschichttemperatur | -55 C to +150 C | -55C to +150C |
| Technology | OptiMOS 3 (Trench MOSFET) | OptiMOS 3 (N-Channel Trench MOSFET) |
| Gehäuse | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TSDSON-8 (TDSON-8 FL) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogenfrei | [DATA_NEEDED: halogen status] | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss value] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS value] | — |
| Part Number | — | BSZ900N20NS3GATMA1 |
| Continuous Drain Current (ID, Tc=25C) | — | 15.2 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | — | 90 mΩ |
| Typical RDS(on) @ VGS=10V | — | 77 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th) typ) | — | 3.5 V |
| Total Gate Charge (Qg typ) | — | [DATA_NEEDED: Qg] |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| ESD Protection | — | Yes (integrated) |
| Avalanche Energy Rated | — | Yes (EAS) |