BSC060N10NS3GATMA1 vs ISC080N10NM6ATMA1 Vergleich
Detaillierter Direktvergleich von BSC060N10NS3GATMA1 von Infineon und ISC080N10NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC060N10NS3GATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $1,05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Ta) | 14.9 A | — |
| Continuous Drain Current (ID, Tc) | 90 A | — |
| On-Resistance RDS(on) Max @ VGS=10V | 6 mOhm | — |
| Power Dissipation (PD, Tc=25C) | 125 W | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 3.5 V | — |
| Betriebs-Sperrschichttemperatur | -55 C to +150 C | — |
| Technology | OptiMOS 3 (Trench MOSFET) | — |
| Gehäuse | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8 FL (TDSON EP) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, per datasheet) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogenfrei | [DATA_NEEDED: halogen status] | Yes |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss value] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS value] | — |
| Product Family | — | OptiMOS™ 6 100V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at Ta | — | 13 A |
| Continuous Drain Current (ID) at Tc | — | 75 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | — | 8.05 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V at 36 µA |
| Betriebstemperaturbereich | — | -55°C to +175°C (TJ max, per datasheet) |
| Qualification | — | Industrial grade (per Infineon OptiMOS 6 100V family) |