BSC066N06NSATMA1 vs BSC0906NSATMA1 Vergleich
Detaillierter Direktvergleich von BSC066N06NSATMA1 von Infineon und BSC0906NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC066N06NSATMA1 | BSC0906NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,49 | $0,48 |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 64 A | — |
| Continuous Drain Current (ID) at TC=100°C | 45 A | — |
| Pulsed Drain Current (IDM) | 256 A | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 6.6 mΩ (max) | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | 26 nC (typ) | [DATA_NEEDED: Qg @ VGS=10V] |
| Power Dissipation (PD) at TC=25°C | 46 W | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Thermal Resistance, Junction-to-Case (RθJC) | 1.3 °C/W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +150°C | — |
| Gehäuse | PG-TDSON-8-6 (TDSON EP) | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant | Compliant |
| Technology | OptiMOS 5 60 V trench-gate | OptiMOS |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 63 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| RDS(on) max (typical reference) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Betriebstemperaturbereich | — | -55C to +150C (junction, typical) |
| Pin-Anzahl | — | 8 |