BSC072N08NS5ATMA1 vs BSC030N08NS5ATMA1 Vergleich

Detaillierter Direktvergleich von BSC072N08NS5ATMA1 von Infineon und BSC030N08NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSC072N08NS5ATMA1 BSC030N08NS5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,46 $0,55
Manufacturer Infineon Technologies Infineon Technologies
Part Family BSC072N08NS5 (OptiMOS 5) —
Transistortyp N-Channel MOSFET —
Technology OptiMOS 5 OptiMOS 5
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) at Tc 74 A —
Drain-Source On-Resistance (RDS(on)) Max 7.2 mOhm at VGS=10V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 69 W —
Gehäuse PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: full min/max operating Tj] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
MSL-Level [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
RoHS-Status Compliant Compliant
Shipping Pack Tape & Reel (ATMA1) —
Standard Pack Quantity 5000 —
Product Type — N-Channel Power MOSFET
Drain-Source Voltage (VDS) max — 80 V
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (ID,pulse) — 161 A
Gate-Source Voltage (VGS) max — +/-20 V
RDS(on) max at VGS=10 V — 3.0 mOhm
RDS(on) max at VGS=7 V — [DATA_NEEDED: RDS(on) at VGS=7V]
Power Dissipation (Ta=25C, 1.5mm FR4) — 2.5 W
Power Dissipation (TC=25C) — 139 W
Operating Temperature Range (TJ) — -55C to +150C
Halogenfrei — Yes
Lead-Free — Yes
Gate Drive Logic — Standard 10V, compatible with 12V drive
Optimized Application — Synchronous Rectification

Datenblätter & Ressourcen

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