BSC074N15NS5ATMA1 vs BSC019N04LSTATMA1 Vergleich
Detaillierter Direktvergleich von BSC074N15NS5ATMA1 von Infineon und BSC019N04LSTATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC074N15NS5ATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,45 | $1,21 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 trench | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 150 V | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 114 A | — |
| Power Dissition (PD) at TC=25°C | 214 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 7.4 mΩ | 1.9 mOhm |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gehäuse | SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks | TDSON-8 (SuperSO8) 5x6 mm |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: TJ min/max] | -55 C to +150 C |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | 1.7 V |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Body Diode | Integrated | — |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |