BSC098N10NS5ATMA1 vs BSC097N06NSATMA1 Vergleich
Detaillierter Direktvergleich von BSC098N10NS5ATMA1 von Infineon und BSC097N06NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BSC098N10NS5ATMA1 | BSC097N06NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,55 | $0,38 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 (Trench) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25C) | 60 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: IDM peak value] |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (Tc=25C) | 69 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | — |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | — |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | — |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | — |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj min/max] | — |
| Gehäuse | PG-TDSON-8-7 (SuperSO8 5x6) | — |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | 1 (Unlimited) |
| Shipping Packaging | Tape & Reel (T/R) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 46 A |
| Continuous Drain Current (ID) at Ta=25C | — | [DATA_NEEDED: ID at Ta=25C PCB-mounted] |
| RDS(on) max at VGS=10 V | — | 9.7 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg typ) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 36 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| Gehäuse / Bauform | — | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Avalanche Rated | — | Yes (EAS per datasheet) |