BSC100N10NSFGATMA1 vs BSC042NE7NS3GATMA1 Vergleich
Detaillierter Direktvergleich von BSC100N10NSFGATMA1 von Infineon und BSC042NE7NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC100N10NSFGATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,49 | $1,24 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 100 V | 75 V |
| Continuous Drain Current (ID), Ta | 11.4 A | — |
| Continuous Drain Current (ID), Tc | 90 A | — |
| Power Dissipation (PD), Tc | 156 W | — |
| Drain-Source On-Resistance (RDS(on)) max | 10 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Gehäuse | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55C to +150C |
| Gate Drive Voltage (recommended) | 10 V (for rated RDS(on)) | — |
| RoHS-Status | Compliant | Compliant |
| Part Number | — | BSC042NE7NS3GATMA1 |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 19 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| MSL-Level | — | 1 |