BSC146N10LS5ATMA1 vs BSC027N06LS5ATMA1 Vergleich

Detaillierter Direktvergleich von BSC146N10LS5ATMA1 von Infineon und BSC027N06LS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
BSC146N10LS5ATMA1 BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 ✓ Aktiv
Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter BSC146N10LS5ATMA1 BSC027N06LS5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,74 $0,66
Technology OptiMOS 5 (logic-level) MOSFET (Metal Oxide)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at Tc=25 C 44 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: IDM] —
RDS(on) max at VGS=10 V 14.6 mOhm —
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level (typ. ~1.7 V) Logic-level
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 52 W —
Betriebstemperaturbereich -55 C to +150 C (TJ max) -55°C to +150°C
Gehäuse PG-TDSON-8-6 (SuperSO8 5x6 mm) —
Montageart Surface Mount Surface Mount
MSL-Level 1 (per JEDEC J-STD-020) —
RoHS-Status Compliant Compliant
Avalanche Energy (EAS) [DATA_NEEDED: EAS] —
Manufacturer — Infineon Technologies
Series — OptiMOS™ 5
Part Status — Active
FET Type — N-Channel
Drain-Source Voltage (VDS) — 60 V
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) at Tc=25°C — 100 A
Continuous Drain Current (ID) at Tc=100°C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
On-Resistance (RDS(on)) max @ VGS=10V — 2.7 mOhm
On-Resistance (RDS(on)) @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (PD) at Tc=25°C — 83 W
Gehäuse / Bauform — PG-TDSON-8-7 (SuperSO8 5x6)
Pin-Anzahl — 8
Gate Charge (Qg) — [DATA_NEEDED: total Qg]
Avalanche Energy Rated — Yes
MSL (Moisture Sensitivity Level) — MSL1

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