BSL308PEH6327XTSA1 vs BSS192PH6327FTSA1 Vergleich
Detaillierter Direktvergleich von BSL308PEH6327XTSA1 von Infineon und BSS192PH6327FTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSL308PEH6327XTSA1 | BSS192PH6327FTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,21 | $0,34 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | SIPMOS Small-Signal-Transistor |
| FET Type | 2x P-Channel (Dual) | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -2 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Gehäuse | PG-TSOP6-6 (TSOT-23-6) | PG-SOT89 (SOT-89-3, 4-pin 3+Tab) |
| Configuration | Dual, common source | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55 C to +150 C (TJ) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per distributor listing) |
| Anzahl der Pins | 6 | — |
| Channel Mode | Enhancement | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] | — |
| RoHS-Status | Compliant | [DATA_NEEDED: explicit RoHS status from datasheet] |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (Vdss) | — | 250 V |
| Continuous Drain Current (Id) @ 25C | — | 190 mA (Ta) |
| Power Dissipation (Pd) | — | 1 W (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.8 V, 10 V |
| Rds On (Max) @ Id, Vgs | — | [DATA_NEEDED: Rds On max @ Vgs] |
| Vgs(th) (Max) | — | [DATA_NEEDED: gate threshold voltage max] |
| Vgs(th) (Typ) | — | [DATA_NEEDED: gate threshold voltage typ] |
| Betriebstemperaturbereich | — | [DATA_NEEDED: Tj max / operating temp] |
| Part Status | — | Active |