BSP125H6433XTMA1 vs BSP89H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP125H6433XTMA1 von Infineon und BSP89H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP125H6433XTMA1 | BSP89H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $0,39 |
| FET Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (V(BR)DSS) | 600 V | — |
| Continuous Drain Current (ID) at TA | 120 mA | — |
| Power Dissipation (PD) at TA | 1.8 W | — |
| Gehäuse | PG-SOT223-4 (3+tab) | PG-SOT223-4 (SOT-223, 4-pin with tab) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per ordering code H6327) |
| Lead Plating | Pb-free | — |
| RoHS-Status | Compliant | Compliant |
| Betriebstemperaturbereich | -55C to +150C (TJ) | -55 °C to +150 °C (Tj) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | [DATA_NEEDED: typical VGS(th) value] |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total Qg] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Thermal Resistance RthJA | [DATA_NEEDED: theta_JA on standard PCB] | — |
| Configuration | Single N-Channel MOSFET | — |
| Transistortyp | — | N-Channel MOSFET, enhancement mode |
| Technology | — | SIPMOS (planar power MOS) |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 240 V (VGS=0, ID=250 µA) |
| Continuous Drain Current (ID) at Ta=25°C | — | 0.35 A |
| Total Power Dissipation (Ptot) at Ta=25°C | — | 1.8 W (on FR4 PCB, 6 cm² cooling area) |
| On-State Resistance (RDS(on)) max | — | 6 Ω (typical) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Thermal Resistance Junction-Ambient (RthJA) | — | 70 K/W (6 cm² PCB) |
| Thermal Resistance Junction-Solder Point (RthJS) | — | 25 K/W |
| Logic-Level Gate Drive | — | Yes (logic-level compatible) |
| dv/dt Rated | — | Yes |
| ESD Protection | — | Internal gate-source Zener |