BSP129H6906XTSA1 vs BSP135H6906XTSA1 Vergleich
Detaillierter Direktvergleich von BSP129H6906XTSA1 von Infineon und BSP135H6906XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP129H6906XTSA1 | BSP135H6906XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $0,78 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSP129H6906XTSA1 | — |
| FET Type | N-Channel, Depletion Mode | N-Channel Depletion Mode |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) at TA=25C | 350 mA | 120 mA |
| Power Dissipation (PD) at TA=25C | 1.8 W | — |
| Drain-Source On-Resistance (RDS(on)) | 6 Ohm (max) | — |
| Operating Mode | Normally-On (Depletion) | — |
| Gate-Source Pinch-Off Voltage | [DATA_NEEDED: VGS(off) typical value] | — |
| Gehäuse | PG-SOT223-4 (SOT-223) | PG-SOT223-4 (SOT-223, 3+tab) |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 functional + 1 tab (4 leads) | — |
| Betriebstemperaturbereich | [DATA_NEEDED: TJ max] | -55C to +150C |
| ESD Protection | Integrated Zener diodes on gate | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (unlimited floor life) | 1 (unlimited) |
| Drain-Source Voltage (VDS) Max | — | 600 V |
| RDS(on) Max at VGS=0V | — | 45 Ohm |
| Power Dissipation (PD) Max | — | 1.8 W |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(off)) | — | Depletion mode (normally-on) |
| Pin-Anzahl | — | 4 (3 leads + drain tab) |
| Technology | — | SIPMOS (planar high-voltage) |
| Automotive Qualification | — | AEC-Q101 (per datasheets.com parametric record) |
| Lead-Free | — | Yes |