BSP135H6906XTSA1 vs BSD214SNH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP135H6906XTSA1 von Infineon und BSD214SNH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP135H6906XTSA1 | BSD214SNH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,27 |
| FET Type | N-Channel Depletion Mode | N-Channel |
| Drain-Source Voltage (VDS) Max | 600 V | — |
| Continuous Drain Current (ID) at TA=25C | 120 mA | — |
| RDS(on) Max at VGS=0V | 45 Ohm | — |
| Power Dissipation (PD) Max | 1.8 W | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(off)) | Depletion mode (normally-on) | — |
| Betriebstemperaturbereich | -55C to +150C | -55C to +150C (junction) |
| Gehäuse | PG-SOT223-4 (SOT-223, 3+tab) | SOT-363 (PG-SOT363-PO), 6-pin |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 4 (3 leads + drain tab) | — |
| Technology | SIPMOS (planar high-voltage) | MOSFET (Metal Oxide), OptiMOS |
| MSL-Level | 1 (unlimited) | 1 |
| RoHS-Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per datasheets.com parametric record) | AEC-Q101 qualified |
| Lead-Free | Yes | — |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) at 25C | — | 1.5 A |
| Power Dissipation (Pd) at Ta | — | 500 mW |
| Gate Drive Voltage (Rds On rated) | — | 2.5 V, 4.5 V |
| Rds On (Max) @ Vgs=4.5V | — | [DATA_NEEDED: Rds On at Vgs=4.5V] |
| Rds On (Max) @ Vgs=2.5V | — | [DATA_NEEDED: Rds On at Vgs=2.5V] |
| Vgs(th) (typical) | — | [DATA_NEEDED: Vgs threshold typical] |
| Lead Plating | — | Pb-free |
| Standard Pack Quantity | — | 3000 (Tape & Reel) |