BSR315PH6327XTSA1 vs ITS4200SMENHUMA1 Vergleich

Detaillierter Direktvergleich von BSR315PH6327XTSA1 von Infineon und ITS4200SMENHUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSR315PH6327XTSA1 ITS4200SMENHUMA1
Marke Infineon Infineon
Kategorie MOSFETs Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,22 $1,05
Manufacturer Infineon Technologies —
Part Number BSR315PH6327XTSA1 —
Series OptiMOS P-Channel —
FET Type P-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) -620 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
On-State Resistance (RDS(on)) 800 mOhm @ -620 mA, -10 V —
Gate Threshold Voltage (VGS(th)) ±20 V (max VGS) —
Input Capacitance (Ciss) 176 pF @ 25 V —
Total Gate Charge (Qg) 6 nC @ 10 V —
Betriebstemperaturbereich -55 C to +150 C (TJ) -40 C to +125 C (industrial)
Gehäuse PG-SC59-3 / SOT-23-3 SOT-223-4 (PG-SOT223-4)
Montageart Surface Mount Surface Mount
Pin-Anzahl 3 —
Packaging Tape & Reel (TR) —
RoHS-Status Compliant Compliant
Automotive Qualified Yes (per Infineon product family marking) No (industrial grade only)
Product Type — Smart High-Side Power Switch
Topologie — N-Channel MOSFET, High-Side
Nominal Load Current — 0.7 A
On-State Resistance (Ron) — [DATA_NEEDED: Ron typ/max]
Operating Voltage Range — 5 V to 41 V
Overvoltage Protection (Load Dump) — 41 V
Input Logic Level — CMOS-compatible
Short-Circuit Protection — Yes (current limitation)
Thermisches Abschalten — Yes (with restart)
Undervoltage Shutdown — Yes
Open-Load Detection — Yes (OFF-state diagnostic)
Status / Diagnostic Output — Yes
Quiescent Current (standby) — [DATA_NEEDED: Iq typ]
Family — PROFET™ Industrial
Channel Count — 1

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