BSS123NH6327XTSA1 vs BSS123IXTSA1 Vergleich
Detaillierter Direktvergleich von BSS123NH6327XTSA1 von Infineon und BSS123IXTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS123NH6327XTSA1 | BSS123IXTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,09 | $0,11 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS123NH6327XTSA1 | — |
| Part Status | Active | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) | 190 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| RDS(on) Max | 6 Ω @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and max VGS(th)] | [DATA_NEEDED: VGS(th) min/typ/max] |
| Gate-Source Voltage Max (VGS) | ±20 V | — |
| Gehäuse | PG-SOT23 (SOT-23-3) | PG-SOT-23-3 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +150 °C (junction) | -55C to +150C (per family datasheet) |
| Qualification | AEC-Q101 (automotive) | Industrial |
| RoHS Compliance | Yes (Pb-free lead plating) | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Transistortyp | — | N-Channel MOSFET |
| Technology | — | OptiMOS Small-Signal |
| Continuous Drain Current (ID) at TA=25C | — | 190 mA |
| Power Dissipation (PD) at TA=25C | — | 500 mW |
| RDS(on) (typical, VGS=10 V) | — | 2.4 ohm |
| RDS(on) (max per family datasheet) | — | 6 ohm |
| Configuration | — | Single N-Channel |
| Lead-Free / RoHS | — | Yes (per distributor listing) |
| Gate Drive Logic Level | — | Logic-level compatible |