BSZ130N03LSGATMA1 vs BSZ065N03LSATMA1 Vergleich
Detaillierter Direktvergleich von BSZ130N03LSGATMA1 von Infineon und BSZ065N03LSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSZ130N03LSGATMA1 - 30V OptiMOS N-FET, 35A, PG-TSDSON-8 | Infineon
BSZ130N03LSGATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BSZ130N03LSGATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,41 | $0,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 25V / 30V | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Ta=25 C) | 10 A | — |
| Kontinuierlicher Drain-Strom (TC=25°C) | 35 A | — |
| On-State Resistance Rds(on) max @ Vgs=10V | 13 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | 2.2 V | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 25 W | — |
| Gehäuse | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +150 C (junction) | -55C to +150C (junction) |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogenfrei | Yes | — |
| Qualification | Industrial / Commercial (non-automotive) | — |
| Series | — | OptiMOS 30V |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 12 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 26 W |
| Gehäuse / Bauform | — | PG-TSDSON-8-FL (S308) |
| Configuration | — | Single N-Channel |
| Technology | — | Trench MOSFET (OptiMOS) |
| Gate Drive (typical) | — | 4.5 V |