BTG70013A1ESWXUMA2 vs BTG7003A1EPWXUMA2 Vergleich

Detaillierter Direktvergleich von BTG70013A1ESWXUMA2 von Infineon und BTG7003A1EPWXUMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BTG70013A1ESWXUMA2 BTG7003A1EPWXUMA2
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,03 $2,20
Product Family PROFET Wire Guard 12V —
Part Number BTG70013A-1ESW (tape & reel: BTG70013A1ESWXUMA2) —
Funktion Single-channel high-side power switch / smart power switch —
Switch Topology High-side, 1:1 —
Output Transistor N-Channel power MOSFET —
Maximum Load Current 26.6 A —
Nominal Supply Voltage 12 V (automotive) —
Operating Voltage Range [DATA_NEEDED: VBB min/max] 6 V to 18 V
On-State Resistance RDS(on) [DATA_NEEDED: typ RDS(on) in mΩ] —
Logic Input Active High —
Idle / Key-off Current < 60 µA (active supply in key-off mode); 50 µA per Infineon product page —
Wire Protection Selectable integrated I²t function Integrated I²t
Wake Feature IDL pin for microcontroller wake-up —
Embedded Protection Over-current, over-voltage, over-temperature, reverse battery, loss of ground, short circuit —
Functional Safety ISO 26262-compliant ISO 26262 compliant
Anzahl der Ausgänge 1 —
Gehäuse PG-TSDSO-24-32 (TSDSO-EP-24, exposed pad) PG-TSDSO-14-22 (exposed pad)
Montageart Surface Mount Surface Mount
Betriebstemperatur [DATA_NEEDED: Tj / TA range] -40C to +150C (TJ)
RoHS-Status RoHS Compliant (per Newark listing) Compliant
Diagnostic Output Status / current-sense feedback pin —
Application Domain Automotive 12 V body electronics, industrial 12 V/24 V power distribution —
Switch Type — High-Side Power Switch
Number of Channels — 1
Configuration — 1:1 N-Channel
Maximum Continuous Load Current — 15.7 A
Load Dump Tolerance — 40 V
Idle Mode Quiescent Current — 50 µA
On-Resistance R_DS(on) — 10 mΩ (typ)
Control Input — Active High

Datenblätter & Ressourcen

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