BTG7003A1EPWXUMA2 vs BTH60702EPVXUMA1 Vergleich

Detaillierter Direktvergleich von BTG7003A1EPWXUMA2 von Infineon und BTH60702EPVXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BTG7003A1EPWXUMA2 BTH60702EPVXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,20 $1,21
Switch Type High-Side Power Switch —
Number of Channels 1 2
Configuration 1:1 N-Channel 2 x 1:1 (dual independent high-side)
Maximum Continuous Load Current 15.7 A —
Operating Voltage Range 6 V to 18 V —
Load Dump Tolerance 40 V —
Idle Mode Quiescent Current 50 µA —
On-Resistance R_DS(on) 10 mΩ (typ) —
Control Input Active High —
Wire Protection Integrated I²t —
Functional Safety ISO 26262 compliant —
Gehäuse PG-TSDSO-14-22 (exposed pad) PG-TSDSO-14 with exposed pad
Montageart Surface Mount Surface Mount
Betriebstemperatur -40C to +150C (TJ) —
RoHS-Status Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — PROFET + 48V
Funktion — Smart high-side power switch (dual channel, 2 x 1:1)
On-State Resistance (typ.) — 60 mΩ per channel
Continuous Load Current (per channel) — 1.7 A
Transistortyp — N-channel vertical power MOSFET with charge pump
Nominal Operating Voltage — 48 V board net
Maximum Supply Voltage — 54 V
Load Voltage Range — [DATA_NEEDED: load voltage range]
Current Sense / Diagnosis — Yes (analog current-sense output)
Protection Features — Over-load, short-circuit, over-voltage, reverse battery, thermal shutdown
Operating Temperature (junction) — -40 °C to +150 °C (automotive grade)
MSL-Level — [DATA_NEEDED: MSL level]

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