BTG7003A1EPWXUMA2 vs BTS426L1E3062AAUMA1 Vergleich
Detaillierter Direktvergleich von BTG7003A1EPWXUMA2 von Infineon und BTS426L1E3062AAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BTG7003A1EPWXUMA2 - 15.7A PROFET Wire Guard High-Side Switch | Infineon
BTG7003A1EPWXUMA2 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BTG7003A1EPWXUMA2 | BTS426L1E3062AAUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,20 | $2,35 |
| Switch Type | High-Side Power Switch | — |
| Number of Channels | 1 | — |
| Configuration | 1:1 N-Channel | — |
| Maximum Continuous Load Current | 15.7 A | — |
| Operating Voltage Range | 6 V to 18 V | — |
| Load Dump Tolerance | 40 V | — |
| Idle Mode Quiescent Current | 50 µA | — |
| On-Resistance R_DS(on) | 10 mΩ (typ) | — |
| Control Input | Active High | — |
| Wire Protection | Integrated I²t | — |
| Functional Safety | ISO 26262 compliant | — |
| Gehäuse | PG-TSDSO-14-22 (exposed pad) | PG-TO263-5-2 (DPAK-5, surface mount) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40C to +150C (TJ) | — |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | Classic PROFET 12V |
| Funktion | — | Smart High-Side Power Switch |
| Topologie | — | N-Channel Vertical Power FET with Charge Pump |
| Anzahl der Ausgänge | — | 1 |
| Ausgangskonfiguration | — | High-Side |
| Typical On-State Resistance (RDS(on)) | — | 5 mΩ |
| Continuous Load Current | — | 7 A |
| Nominal Operating Voltage | — | 12 V (automotive) |
| Input Type | — | CMOS-compatible, ground-referenced |
| Diagnostic Output | — | Yes (ST pin, ground-referenced feedback) |
| Embedded Protections | — | Overload, Thermal Shutdown, Overvoltage Clamp, ESD |
| Technology | — | Smart SIPMOS, monolithic |
| Betriebstemperaturbereich | — | -40 °C to +150 °C [DATA_NEEDED: exact Tj limit per datasheet section] |
| Automotive Qualification | — | AEC-Q100 (per Classic PROFET 12V family) |