BTH60801EPLXUMA1 vs BTH61002EPAXUMA1 Vergleich

Detaillierter Direktvergleich von BTH60801EPLXUMA1 von Infineon und BTH61002EPAXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BTH60801EPLXUMA1 BTH61002EPAXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,74 $1,82
Product Type Smart High-Side Power Switch —
Number of Channels 1 2
Topologie High-Side N-Channel MOSFET with Charge Pump Dual high-side switch (2 x 1:1)
On-State Resistance (RDS(on)) 80 mΩ (typical) —
Continuous Load Current 2.5 A —
Operating Voltage Range 4 V to 54 V —
Nominal Board Net 48 V (PROFET+ 48V family) —
Current Limitation Adjustable Adjustable
Diagnostic Output Current Sense (IS) pin —
Input Logic Active High and Active Low —
Protection Features Overtemperature, Overvoltage, Undervoltage, Short Circuit —
Gehäuse PG-TSDSO-14 (exposed pad) PG-TSDSO-14 (exposed pad)
Betriebstemperaturbereich -40 °C to +150 °C (Tj) -40 C to +150 C [DATA_NEEDED: junction T_max]
Montageart Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AEC-Q100
RoHS-Status Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — PROFET + 48V
Switch Type — N-channel vertical power MOSFET with charge pump
Continuous Load Current per Channel — 2.0 A
Typical On-State Resistance (Ron) — 200 mOhm
Nominal Supply Voltage — 54 V
Maximum Operating Voltage — 60 V
Load Dump Capability — 60 V
Input Control Logic — Active-High / Active-Low
Diagnostic Function — Current sense output, open-load detection, short-to-ground/short-to-battery, overtemperature

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern