BTH61002EPAXUMA1 vs BTH60801EPLXUMA1 Vergleich

Detaillierter Direktvergleich von BTH61002EPAXUMA1 von Infineon und BTH60801EPLXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BTH61002EPAXUMA1 BTH60801EPLXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,82 $1,74
Manufacturer Infineon Technologies —
Product Family PROFET + 48V —
Topologie Dual high-side switch (2 x 1:1) High-Side N-Channel MOSFET with Charge Pump
Number of Channels 2 1
Switch Type N-channel vertical power MOSFET with charge pump —
Continuous Load Current per Channel 2.0 A —
Typical On-State Resistance (Ron) 200 mOhm —
Nominal Supply Voltage 54 V —
Maximum Operating Voltage 60 V —
Load Dump Capability 60 V —
Input Control Logic Active-High / Active-Low —
Diagnostic Function Current sense output, open-load detection, short-to-ground/short-to-battery, overtemperature —
Current Limitation Adjustable Adjustable
Gehäuse PG-TSDSO-14 (exposed pad) PG-TSDSO-14 (exposed pad)
Montageart Surface Mount Surface Mount
Automotive Qualification AEC-Q100 AEC-Q100 qualified
Betriebstemperaturbereich -40 C to +150 C [DATA_NEEDED: junction T_max] -40 °C to +150 °C (Tj)
RoHS-Status Compliant Compliant
Product Type — Smart High-Side Power Switch
On-State Resistance (RDS(on)) — 80 mΩ (typical)
Continuous Load Current — 2.5 A
Operating Voltage Range — 4 V to 54 V
Nominal Board Net — 48 V (PROFET+ 48V family)
Diagnostic Output — Current Sense (IS) pin
Input Logic — Active High and Active Low
Protection Features — Overtemperature, Overvoltage, Undervoltage, Short Circuit

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