BTN9960LVAUMA1 vs BTT62001ENAXUMA1 Vergleich
Detaillierter Direktvergleich von BTN9960LVAUMA1 von Infineon und BTT62001ENAXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BTT62001ENAXUMA1 - 200mΩ 1.5A Smart High-Side Power Switch | Infineon
BTT62001ENAXUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BTN9960LVAUMA1 | BTT62001ENAXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Motor Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,44 | $1,72 |
| Product Type | Integrated Half-Bridge Motor Driver | Smart High-Side Power Switch |
| Topologie | P-channel high-side + N-channel low-side MOSFET with integrated driver IC | 1:1 N-Channel High-Side |
| Path Resistance (typ @ 25C) | 9.7 mOhm | — |
| Overcurrent Detection Threshold | 35 A | — |
| Supply Voltage Range (operating) | 8 V to 18 V | — |
| Supply Voltage Range (max rating) | 40 V | — |
| Logic Input Low Voltage (max) | 1.3 V | — |
| Logic Input High Voltage (min) | 1.6 V | — |
| Turn-On Rise Time (typ) | 2.5 us | — |
| Turn-Off Fall Time (typ) | 250 ns | — |
| Dead Time (typ) | 250 ns | — |
| Standby Current (max) | 3.3 uA | — |
| Propagation Delay (typ) | 3.6 us | — |
| Betriebstemperaturbereich | -40C to +150C | — |
| Gehäuse | PG-HSOF-7-1 | PG-TDSO-8-31 (DSO-8 with exposed pad) |
| Montageart | Surface Mount | Surface Mount |
| AEC-Q100 Qualification | Grade 1 qualified | — |
| Protection Features | Under-voltage, Over-current, Short-circuit, Over-temperature, Interleaved (shoot-through), Enable shutdown, Dead-time control | Overload, Short-Circuit, Over-Temperature, Over-Voltage, Reverse Battery |
| RoHS-Status | Compliant | — |
| On-State Resistance (Ron) | — | 200 mΩ (typical) |
| Continuous Load Current | — | 1.5 A |
| Operating Voltage Range | — | 5 V to 48 V |
| Technology | — | Smart6 HV (N-channel vertical MOSFET with charge pump) |
| Diagnostic Output | — | Current Sense (IS) pin |
| Lamp Drive Capability | — | 1 × R10W at 24 V or 1 × R5W at 12 V |
| Betriebstemperatur | — | -40 °C to +150 °C junction |
| MSL-Level | — | 2A (4 weeks) |
| ECCN | — | EAR99 |
| REACH Status | — | REACH Unaffected |