BTS4130QGAXUMA1 vs ITS41K0SMENHUMA1 Vergleich
Detaillierter Direktvergleich von BTS4130QGAXUMA1 von Infineon und ITS41K0SMENHUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BTS4130QGAXUMA1 | ITS41K0SMENHUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,86 | $0,59 |
| Product Type | Quad Smart High-Side Power Switch | — |
| Number of Channels | 4 | 1 |
| Topologie | High-Side N-Channel MOSFET with charge pump | High-Side Switch, 1:1 N-Channel |
| Continuous Load Current per Channel | 2.1 A | — |
| On-State Resistance R_DS(on) per Channel | 130 mOhm typical | — |
| Betriebsversorgungsspannung | 6 V to 18 V (extended to 28 V transient) | — |
| Overvoltage Clamp (Load Dump) | 45 V typical | — |
| Quiescent Current (Standby) | [DATA_NEEDED: quiescent current value] | — |
| Betriebstemperaturbereich | -40 C to +150 C junction | — |
| Automotive Qualification | AEC-Q100 qualified | — |
| Protection Features | Current limit, overtemperature shutdown, overvoltage clamp, reverse battery | Thermal Shutdown, Overcurrent Limit, Overvoltage Clamp, ESD Protection, Reverse Battery |
| Diagnostic Output | Status feedback pin | Yes (status/feedback pin) |
| Gehäuse | PG-DSO-20-32 (20-pin DSO, 7.50 mm width) | PG-SOT223-4 (SOT-223-4) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 3 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | Compliant |
| Part Number | — | ITS41K0SMENHUMA1 (ITS41K0S-ME-N) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | PROFET Industrial MINI-PROFET |
| Funktion | — | Smart High-Side Power Switch |
| Supply Voltage Range (Vbb) | — | 4.9 V to 60 V |
| Maximum Continuous Load Current | — | 200 mA |
| On-Resistance R_DS(on) (typ) | — | 1 Ω |
| On-Resistance R_DS(on) (max) | — | 800 mΩ [DATA_NEEDED: per datasheet conditions] |
| Operating Temperature (Tj) | — | -40°C to +125°C |