CGD65B130S2 vs CGD65A130S2 Vergleich
Detaillierter Direktvergleich von CGD65B130S2 von Cambridge GaN Devices und CGD65A130S2 von Cambridge GaN Devices. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | CGD65B130S2 | CGD65A130S2 |
|---|---|---|
| Marke | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,10 | $4,65 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| Transistortyp | GaN HEMT (enhancement mode, N-channel) | — |
| Drain-Source Voltage (VDS) | 650 V | — |
| On-Resistance (RDS(on)) | 130 mΩ (typical) | — |
| Continuous Drain Current (ID) | 12 A | [DATA_NEEDED: continuous ID at 25°C and 100°C] |
| Gate Technology | ICeGaN™ (standard-driver compatible) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero) | 0 nC (GaN - negligible) |
| Gehäuse | 8-DFN 5x6 mm with exposed thermal pad | DFN-16 (8 × 8 mm) with exposed pad |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55 °C to +150 °C (junction) | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge at VGS=10V] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | [DATA_NEEDED: Coss value at VDS=400V] |
| Rise Time / Fall Time | Sub-nanosecond (per datasheet typical application) | — |
| MSL-Level | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Substrate Technology | GaN-on-silicon | — |
| Technology | — | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) |
| Drain-Source Voltage (VDS, max) | — | 650 V |
| On-State Resistance (RDS(on)) | — | 130 mΩ (typ) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Gate Charge (Qg, total) | — | [DATA_NEEDED: Qg typical value] |
| Gate-Source Voltage Rating | — | ±20 V (ICeGaN robust gate; see datasheet) |
| Betriebs-Sperrschichttemperatur | — | -40°C to +150°C |
| Integrated Features | — | Current sense, Miller clamp (NL³), ICeGaN gate |