DS1249AB-70IND vs DS1249AB-70IND+ Vergleich

Detaillierter Direktvergleich von DS1249AB-70IND von Analog Devices und DS1249AB-70IND+ von Analog Devices. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Analog Devices
DS1249AB-70IND DS1249AB-70IND - 2Mb NVSRAM, 70ns, 32-EDIP | Analog Devices

DS1249AB-70IND - 2Mb NVSRAM, 70ns, 32-EDIP | Analog Devices

DS1249AB-70IND ✓ Aktiv
Analog Devices
DS1249AB-70IND+ DS1249AB-70IND+ - 2Mb NVSRAM 32-EDIP 70ns | Maxim Integrated

DS1249AB-70IND+ - 2Mb NVSRAM 32-EDIP 70ns | Maxim Integrated

DS1249AB-70IND+ ✓ Aktiv

Spezifikationsvergleich

Parameter DS1249AB-70IND DS1249AB-70IND+
Marke Analog Devices Analog Devices
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $49,85 $65,80
Speichertyp NVSRAM (Non-Volatile SRAM) NVSRAM (Non-Volatile SRAM)
Speichergröße 2 Mbit (262,144 x 8) 2 Mbit (2,097,152 bits)
Speicherorganisation 262,144 words x 8 bits 256K x 8
Access Time 70 ns 70 ns (max)
Schnittstelle Parallel Parallel
Write Cycle Endurance Unlimited writes —
Data Retention 10 years minimum (no external power) 10 years (typical, with internal lithium cell)
Backup Mechanism Internal lithium energy cell + VCC monitor —
Write Protection Automatic on VCC out-of-tolerance Automatic on VCC out-of-tolerance
Operating Voltage (VCC) 5 V (typical NVSRAM range) —
Betriebstemperatur -40C to +85C (industrial, -IND suffix) —
Gehäuse 32-EDIP (Extended DIP module, 0.600 inch / 15.24 mm) —
Montageart Through-Hole (DIP module) Through-Hole (DIP module with socket)
RoHS-Status Contains lithium - subject to special handling rules Compliant (per Maxim Integrated product page)
Technology Low-power CMOS —
Write Cycle Time — 70 ns (word write, no write delay)
Supply Voltage (VCC) — 5 V ±10% (typical 4.5 V to 5.5 V)
Betriebstemperaturbereich — -40 °C to +85 °C (industrial, -IND suffix)
Gehäuse / Bauform — 32-EDIP (Extended DIP, 0.600 in / 15.24 mm)
Pin-Anzahl — 32
Built-in Battery — Yes (internal lithium energy source)
Endurance — Unlimited SRAM read/write cycles
Shipping Regulation — UN3481 PI970 (lithium battery - air/sea per IATA)
Lead-Free / Halogen-Free — Lead-free (RoHS compliant)

Datenblätter & Ressourcen

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