EP1S40F780C8N vs EP1S40F780I6 Vergleich
Detaillierter Direktvergleich von EP1S40F780C8N von Intel und EP1S40F780I6 von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP1S40F780C8N | EP1S40F780I6 |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Obsolete | NRND |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $130,00 | $305,00 |
| Family | Stratix | Stratix |
| Series | EP1S | EP1S40 |
| Logic Elements | 41,250 | 41,250 |
| Embedded Memory | 3,423,744 bits | 3,423,744 bits (approx. 3.42 Mbit) |
| Embedded Multipliers | 615 (18-bit x 18-bit) | — |
| Gehäuse | 780-ball FCBGA (FineLine BGA), 29 mm x 29 mm, 1 mm pitch | 780-pin FC-FBGA (FineLine BGA) |
| Logic Family | CMOS | — |
| Supply Voltage (Core) | 1.5 V | — |
| Speed Grade | C8 (commercial) | — |
| Betriebstemperatur | 0 °C to +85 °C | — |
| I/O Standard Support | LVDS, LVTTL, LVCMOS, SSTL, HSTL, PCI, PCI-X | — |
| Maximum LVDS Data Rate | 840 Mbps | — |
| PLL Blocks | Up to 12 | — |
| Speichertyp | TriMatrix (MRAM, M512, M4K blocks) | — |
| External Memory Interface | DDR, DDR-II, QDR, SDRAM | — |
| Configuration Method | Passive serial, Fast passive parallel, JTAG | — |
| Design Software | Quartus II | — |
| RoHS-Status | Compliant | Compliant |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Logic Array Blocks (LABs) | — | 4,125 |
| User I/O Pins | — | 615 |
| Process Technology | — | 130 nm CMOS |
| Core Voltage | — | 1.5 V |
| Maximum Internal Frequency | — | 450.05 MHz |
| Operating Temperature Grade | — | Industrial |
| Configuration Modes | — | Passive Serial, Passive Parallel, Fast Passive Parallel, Active Serial, JTAG |
| I/O Standards Supported | — | LVDS, LVPECL, SSTL, HSTL, LVCMOS, LVTTL |