EP2S180F1020C4 vs EP2S180F1020C3 Vergleich

Detaillierter Direktvergleich von EP2S180F1020C4 von Intel und EP2S180F1020C3 von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter EP2S180F1020C4 EP2S180F1020C3
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Obsolete Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $4.200,00 $1.280,00
Family Stratix II —
Logic Elements (LEs) 179400 —
Adaptive Logic Modules (ALMs) 89760 (approximate, derived from LE count) —
Equivalent LEs 179400 —
Logic Array Blocks (LABs) 8970 8,970
Total RAM Bits 9383040 (approx. 1146 Kbit / 1.16 Mbit usable blocks) —
Embedded Multipliers (18x18) 768 —
PLLs 12 —
Maximum User I/O 742 —
Gehäuse 1020-BBGA (FineLine BGA, FC-FBGA), 33x33 mm 1020-ball FBGA (flip-chip BGA)
Supply Voltage - Core 1.15 V to 1.25 V (typical 1.2 V) —
Process Technology 90 nm CMOS —
Betriebstemperatur 0C to +85C (commercial, C4 grade) Commercial (0C to +85C)
RoHS-Status Non-compliant (per Heisener and alterachips listings) [DATA_NEEDED: RoHS status]
Lead Free [DATA_NEEDED: lead-free status] —
Montageart Surface Mount (BGA, ball grid array) Surface Mount
Supplier Device Package 1020-FBGA (33x33) —
Series — Stratix II
Device Family — EP2S180
Equivalent Logic Elements (LEs) — 179,400
Embedded Memory (RAM bits) — 9,383,040
Maximum User I/Os — 742
Process Node — 90 nm, all-layer copper SRAM
Core Voltage — 1.2 V
Speed Grade — C3
DSP Blocks — Dedicated high-speed multipliers
Memory Interfaces Supported — DDR2 SDRAM, QDRII SRAM, RLDRAM II
I/O Standards — LVDS, LVPECL, SSTL, HSTL
Configuration Method — SRAM-based (volatile, requires boot device)
Development Toolchain — Quartus II / Quartus Prime

Datenblätter & Ressourcen

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