EP3SE50F780C4N vs EP3SE50F780C2N Vergleich

Detaillierter Direktvergleich von EP3SE50F780C4N von Intel und EP3SE50F780C2N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter EP3SE50F780C4N EP3SE50F780C2N
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus NRND NRND
Lagerstatus In Stock In Stock
Stückpreis (USD) $1.430,00 $278,90
Family Stratix III E Stratix III Enhanced (E)
Logic Elements (LE) 47,500 —
Embedded Memory Bits 5,760,000 —
Embedded Memory (M9K/M144K blocks) 488 (per family datasheet) —
Number of LABs 1900 —
Maximum User I/Os 488 —
DSP Blocks (18x18 multipliers) 432 —
PLLs 12 (per family datasheet) —
Maximum Operating Frequency 717 MHz —
Transceiver Channels Up to 12 (per family, model-dependent) 12 (data rate not in source data)
Transceiver Data Rate Up to 6.375 Gbps (per Stratix III E family) —
Process Node 40 nm —
Gehäuse 780-Ball FBGA, 29 mm x 29 mm, 1.0 mm pitch 780-ball FC-FBGA (FBGA-780)
Montageart Surface Mount (BGA) Surface Mount (BGA)
Versorgungsspannung Core 0.9 V, I/O 1.2 V-3.3 V (multi-rail) —
Betriebstemperatur 0C to +85C (C4 commercial grade) —
Configuration Modes JTAG, Passive Serial, Fast Passive Parallel —
RoHS-Status Lead-free / RoHS compliant —
MSL-Level 3 (per JEDEC J-STD-020, FBGA package) —
Hard Memory Controller DDR2/DDR3 SDRAM (per Stratix III E family) —
Logic Elements — 47,500
Adaptive Logic Modules (ALMs) — 19,000
Embedded Memory — 5,760,000 bits
DSP Blocks — Yes (number not in source data)
User I/O Count — 488
Process Technology — 65 nm CMOS
Core Voltage — 0.9 V to 1.1 V
Maximum Internal Clock Frequency — 600 MHz
Speed Grade — C2
Temperature Grade — Commercial (C2)
Lead Free — Yes
Configuration Mode — Passive Serial / Fast Passive Parallel

Datenblätter & Ressourcen

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